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|Originally Published: Monday, 24 April 2000||Author: Katharine McCoy|
|Published to: enhance_articles_hardware/Hardware News||Page: 1/1 - [Std View]|
Silicon dioxide could still insulate 70-nm ICs
Confidence is growing that tried-and-true silicon dioxide can be used as the gate oxide for the coming crop of 70-nanometer, or 0.07-micron, ICs, even as the gate insulation layer is thinned to the 15-angstrom (1.5-nm) region or less.